UPD4104 Datasheet 4096 x 1 STATIC NMOS RAM

Manufacturer: NEC (now Renesas Electronics)

UPD4104 4096 x 1 static nmos ram by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	UPD4104
Manufacturer	NEC (now Renesas Electronics)
File Size	318.50 KB
Description	4096 x 1 STATIC NMOS RAM
Datasheet	UPD4104 Datasheet

Overview

NEe Microcomputers, Inc.

NEe p.PD4104 p.PD41 04·1 pPD41 04·2 4096 x 1 STATIC NMOS RAM DEseR IPTION The J.LPD4104 is a high performance 4K static RAM.

Organized as 4096 x 1, it uses a combination of static storage cells with dynamic input/output circuitry to achieve high speed and low power in the same device.

Key Features

' . FastAccessTime-200ns (J. LPD4104-2).
Very Low Stand-By Power - 28 mW Max.
Low VCC Data Retention Mode to +3 Volts.
Single +5V ±10% Supply.
Fully TTL Compatible.
Available in 18 Pin Plastic and Ceramic Dual-in-Line Packages.
'3 Performance Ranges: II jlPD4104 jlPD4104-1 jlPD4104-2 ACCESS TIME 300 ns 250 ns 200 ns.

More Datasheets from NEC (now Renesas Electronics)

Part Number	Description
UPD4104-1	4096 x 1 STATIC NMOS RAM
UPD4104-2	4096 x 1 STATIC NMOS RAM
UPD411	FULLY DECODED RANDOM ACCESS MEMORY
UPD411-1	FULLY DECODED RANDOM ACCESS MEMORY
UPD411-2	FULLY DECODED RANDOM ACCESS MEMORY
UPD411-3	FULLY DECODED RANDOM ACCESS MEMORY
UPD411-4	FULLY DECODED RANDOM ACCESS MEMORY
UPD411A	4096-BIT DYNAMIC RAMS
UPD411A-1	4096-BIT DYNAMIC RAMS
UPD411A-2	4096-BIT DYNAMIC RAMS