Datasheet4U Logo Datasheet4U.com

UPD4164-2 Datasheet 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY

Manufacturer: NEC (now Renesas Electronics)

Download the UPD4164-2 datasheet PDF. This datasheet also includes the UPD4164-1 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (UPD4164-1-NEC.pdf) that lists specifications for multiple related part numbers.

Overview

NEe Microcomputers, Inc.

65,536 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY NEe Jo&PD4164-1 ,.,.

PD4164-2 J.L PD4164-3 ~rn~[m~~~illrnw DESCR I PTI ON The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply.

Key Features

  • Multiplexed address inputs permit the /lPD4164 to be packaged in the standard 16 pin dual-in-line package. The 16 pin package provides the highest system bit densities and is compatible with widely available automated handling equipment.
  • High Memory Density.
  • MUltiplexed Address Inputs.
  • Single +5V Supply.
  • On Chip Substrate Bias Generator.
  • Access Time: /lPD4164-1 - 250 ns /lPD4164-2 - 200 ns /lPD4164-3 - 150 ns.
  • Read, Write Cycle Time: /lPD41.

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
UPD4164-1 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY
UPD4164-3 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY
UPD4164 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY
UPD416 16K x 1-Bit DYNAMIC NMOS RAM
UPD416-1 16K x 1-Bit DYNAMIC NMOS RAM
UPD416-1 16384 x 1 Bit DYNAMIC NMOS RAM
UPD416-2 16K x 1-Bit DYNAMIC NMOS RAM
UPD416-2 16384 x 1 Bit DYNAMIC NMOS RAM
UPD416-3 16384 x 1 Bit DYNAMIC NMOS RAM
UPD416-3 16K x 1-Bit DYNAMIC NMOS RAM