UPD4164 Key Features
- High Memory Density
- MUltiplexed Address Inputs
- Single +5V Supply
- On Chip Substrate Bias Generator
- Access Time: /lPD4164-1
- 250 ns
- 200 ns /lPD4164-3
- 150 ns
- Read, Write Cycle Time: /lPD4164-1
- 410 ns
- Part: UPD4164
- Manufacturer: NEC (official site)
- Size: 367.60 KB
Related NEC Datasheets
| Part Number | Description |
|---|---|
| UPD4164-1 | 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY |
| UPD4164-2 | 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY |
| UPD4164-3 | 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY |
| UPD416 | 16K x 1-Bit DYNAMIC NMOS RAM |
| UPD416-1 | 16K x 1-Bit DYNAMIC NMOS RAM |
UPD4164 Description
65,536 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY NEe Jo&PD4164-1 ,.,. PD4164-2 J.L PD4164-3 ~rn~[m~~~illrnw DESCR I PTI ON The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply. The negative-voltage substrate bias is internally generated - its operation is both automatic and transparent.