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UPD445L-1 Datasheet FULLY DECODED 4096 STATIC CMOS RAM

Manufacturer: NEC (now Renesas Electronics)

Overview: NEe Microcomputers, Inc. NEe fLPD445L fLPD445L·1 FULLY DECODED 4096 STATIC CMOS.

Download the UPD445L-1 datasheet PDF. This datasheet also includes the UPD445L variant, as both parts are published together in a single manufacturer document.

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General Description

The ~PD445L is a very low power 4,,096 bit (1024 words by 4 bits) static RAM fabricated with NEC's complementary MOS (CMOS) process, It has two chip enable inputs (CE1, I I ' CE2).

Minimum standby current is drawn when CE1 is at a high level, while inhibiting all address and control line transitions or, unconditionally when CE2 is at a low level.

This device ideally meets the low power requirements of battery operated systems and battery back-up systems for non-volatility of data.

Key Features

  • Single +5V Power Supply.
  • Ideal for Battery Operation.
  • Low Standby Power fllr Dat,a Retention.
  • Simple Memory Expansion - Chip Enable Inputs.
  • Access Time - 650 ns Max. {J,tPD445L) 4.50 ns Max. (~PD445L-1).
  • Directly TTL Compatible - All Inputs and Outputs.
  • Common Data Input and Output.
  • Static CMOS - No Clock or Refreshing Required.
  • 20 Pin Dual-In-Line Plastic Package PIN.

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
UPD445L FULLY DECODED 4096 STATIC CMOS RAM
UPD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
UPD4416001 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT
UPD4416004 16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT
UPD4416008 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT
UPD4416016 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT
UPD44164082 (UPD44164082/182/362) 18M-BIT DDRII SRAM 2-WORD BURST OPERATION
UPD44164084 (UPD44164084/184/364) 18M-BIT DDRII SRAM 4-WORD BURST OPERATION
UPD44164085 (UPD44164085/185/365) 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
UPD44164182 (UPD44164082/182/362) 18M-BIT DDRII SRAM 2-WORD BURST OPERATION