UPD441000L-X Datasheet 1m-bit CMOS Static Ram 128k-word By 8-bit Extended Temperature Operation

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET MOS INTEGRATED CIRCUIT µPD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE.

Datasheet Details

Part number	UPD441000L-X
Manufacturer	NEC (now Renesas Electronics)
File Size	168.57 KB
Description	1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
Datasheet	UPD441000L-X_NEC.pdf

The µPD441000L-X is a high speed, low power, 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM.

The µPD441000L-X has two chip enable pins (/CE1, CE2) to extend the capacity.

5 The µPD441000L-X is packed in 32-pin plastic SOP and 32-pin plastic TSOP (I) (8 ×13.4 mm) and (8×20 mm).

131,072 words by 8 bits organization.
Fast access time : 70, 85, 100, 120, 150 ns (MAX. ).
Low voltage operation (B version : VCC = 2.7 to 3.6 V, C version : VCC = 2.2 to 3.6 V, D version : VCC = 1.8 to 3.6 V).
Low VCC data retention (B version : 2.0 V (MIN. ), C version, D version : 1.5 V (MIN. )).
Operating ambient temperature : TA =.
25 to +85 °C.
Output Enable input for easy.

Part Number	Description
UPD4416001	16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT
UPD4416004	16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT
UPD4416008	16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT
UPD4416016	16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT
UPD44164082	(UPD44164082/182/362) 18M-BIT DDRII SRAM 2-WORD BURST OPERATION
UPD44164084	(UPD44164084/184/364) 18M-BIT DDRII SRAM 4-WORD BURST OPERATION
UPD44164085	(UPD44164085/185/365) 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
UPD44164182	(UPD44164082/182/362) 18M-BIT DDRII SRAM 2-WORD BURST OPERATION
UPD44164184	(UPD44164084/184/364) 18M-BIT DDRII SRAM 4-WORD BURST OPERATION
UPD44164185	(UPD44164085/185/365) 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION