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UPD441000L-X - 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION

General Description

The µPD441000L-X is a high speed, low power, 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM.

The µPD441000L-X has two chip enable pins (/CE1, CE2) to extend the capacity.

The µPD441000L-X is packed in 32-pin plastic SOP and 32-pin plastic TSOP (I) (8 ×13.4 mm) and (8×20 mm).

Key Features

  • 131,072 words by 8 bits organization.
  • Fast access time : 70, 85, 100, 120, 150 ns (MAX. ).
  • Low voltage operation (B version : VCC = 2.7 to 3.6 V, C version : VCC = 2.2 to 3.6 V, D version : VCC = 1.8 to 3.6 V).
  • Low VCC data retention (B version : 2.0 V (MIN. ), C version, D version : 1.5 V (MIN. )).
  • Operating ambient temperature : TA =.
  • 25 to +85 °C.
  • Output Enable input for easy.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS INTEGRATED CIRCUIT µPD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD441000L-X is a high speed, low power, 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM. The µPD441000L-X has two chip enable pins (/CE1, CE2) to extend the capacity. 5 The µPD441000L-X is packed in 32-pin plastic SOP and 32-pin plastic TSOP (I) (8 ×13.4 mm) and (8×20 mm). Features • 131,072 words by 8 bits organization • Fast access time : 70, 85, 100, 120, 150 ns (MAX.) • Low voltage operation (B version : VCC = 2.7 to 3.6 V, C version : VCC = 2.2 to 3.6 V, D version : VCC = 1.8 to 3.6 V) • Low VCC data retention (B version : 2.0 V (MIN.), C version, D version : 1.5 V (MIN.