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UPD45128163, UPD 128M-bit Synchronous DRAM 4-bank/ LVTTL

UPD45128163 Description

DATA SHEET MOS INTEGRATED CIRCUIT µPD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL .
The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,3.

UPD45128163 Features

* Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
* Pulsed interface
* Possible to assert random column address in every cycle
* Quad internal banks controlled by BA0(A13) and BA1(A12)
* Byte control (×16) by LDQM and UDQM

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: UPD45128163, UPD. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
UPD45128163, UPD
Manufacturer
NEC
File Size
1.08 MB
Datasheet
UPD-4512.pdf
Description
128M-bit Synchronous DRAM 4-bank/ LVTTL
Note
This datasheet PDF includes multiple part numbers: UPD45128163, UPD.
Please refer to the document for exact specifications by model.

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128M-bit Synchronous DRAM 4-bank LVTTL NEC
NEC UPD45128163-like datasheet