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UPD45128163 Key Features

  • Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
  • Pulsed interface
  • Possible to assert random column address in every cycle
  • Quad internal banks controlled by BA0(A13) and BA1(A12)
  • Byte control (×16) by LDQM and UDQM
  • Programmable Wrap sequence (Sequential / Interleave)
  • Programmable burst length (1, 2, 4, 8 and full page)
  • Programmable /CAS latency (2 and 3)
  • Automatic precharge and controlled precharge
  • CBR (Auto) refresh and self refresh

UPD45128163 Description

The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous DRAMs are patible with Low Voltage TTL (LVTTL).