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NELL SEMICONDUCTOR

2SC4793AF Datasheet Preview

2SC4793AF Datasheet

High Frequency NPN Power Transistor

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SEMICONDUCTOR
2SC4793AF RRooHHSS
Nell High Power Products
High Frequency NPN Power Transistor
1A/230V/20W
FEATURES
High transition frequency:
fT = 100MHz (typ.)
Complementary to 2SA1837AF
TO-220F package which can be
installed to the heat sink with one screw
APPLICATIONS
Power amplifier
Driver stage amplifier
BCE
TO-220F
(2SC4793AF)
C (2)
B
(1) NPN
E(3)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VCBO
Collector to base voltage
VCEO
Collector to emitter voltage
IB=0
VEBO
Emitter to base voltage
IC=0
IC Collector current-continuous
ICM (Icp)
Peak collector current
tp<5 ms
IB Base Current
PC Collector power dissipation
TC=25°C
Ta=25°C
TJ Junction temperature
TSTG
Storage temperature
VALUE
230
230
5
1
2
0.1
20
2.0
150
-55 to 150
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
ICBO
Collector cutoff current
VCBO=230V, lE=0
TC=25°C
TC=125°C
lEBO
Emitter cutoff current
VEBO=5V, lC=0
V(BR)CEO Collector to emitter breakdown voltage IB=0, Ic=100mA
VCE(sat)*
Collector to emitter saturation voltage IC=0.5A, IB=50mA
VBE
hFE*
FT
Base to emitter voltage
Forward current transfer ratio
(DC current gain)
Transition frequeucy
IC=0.5A, VCE=5V
IC=0.1A, VCE=5V
VCE=10V, IC=100mA
Cob Collector output capacitance
VCB=10V, IE=0, f=1MHz
*Pulsed: Pulse duration= 300μs, duty cycle= 1.5%.
Min.
230
100
Typ.
100
20
Max.
1.0
100
1.0
1.5
1.0
320
www.nellsemi.com
Page 1 of 3
UNIT
V
A
W
°C
UNIT
μA
V
MHz
pF
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NELL SEMICONDUCTOR

2SC4793AF Datasheet Preview

2SC4793AF Datasheet

High Frequency NPN Power Transistor

No Preview Available !

SEMICONDUCTOR
1.0
0.8
0.6
0.4
0.2
0
0
Fig.1 IC-VCE Characteristics
20mA
10mA
8mA
6mA
4mA
IB = 2mA
24
Common emitter
TC = 25°C
6 8 10
Collector-emitter voltage, VCE (V)
Fig.3 hFE-IC Characteristics
1000
500
300
100
50
Common emitter
VCE = 5 V
25°C
TC = 100°C
-25°C
30
10
0.003
0.01 0.03 0.1 0.3
Collector current , lC (A)
1
3
2SC4793AF RRooHHSS
Nell High Power Products
Fig.2 IC-VBE Temperature characteristics
1.0
0.8
0.6
TC = 100°C
-25°C
25°C
0.4
0.2
0
0
Common emitter
VCE = 5V
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage, VBE (V)
Fig.4 VCE (sat) - IC Temperature characteristics
1
0.5 Common emitter
IC/IB = 10
0.3
TC = 100°C
0.1
-25°C
25°C
0.05
0.03
0.01
0.003
0.01 0.03 0.1 0.3
Collector current , lC (A)
1
3
Fig.5 fT-IC Characteristics
500
300 Common emitter
VCE =10 V
TC = 25°C
100
50
30
10
5 10 30 100 300
Collector current, lC (mA)
1000
Fig.6 Safe operating area (SOA)
5
3
1
0.5
0.3
0.1
0.05
0.03
IC max (pulsed)*
IC max (continuous)
1 ms*
10 ms*
100 ms*
DC operation
TC = 25°C
* Single nonrepetitive pulse TC = 25°C
Curves must be derated linearly
with increase in temperature
0.01
1
VCEO max
3 10 30 100 300
Collector emitter voltage, VCE (V)
www.nellsemi.com
Page 2 of 3


Part Number 2SC4793AF
Description High Frequency NPN Power Transistor
Maker NELL SEMICONDUCTOR
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2SC4793AF Datasheet PDF






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