2SA940
2SA940 is Silicon PNP Power Transistor manufactured by NJS.
DESCRIPTION
- Collector-Emitter Breakdown Voltage
:V(BR)CEo=-150V(Min)
- DC Current Gain
: h FE=40-140@lc=-0.5A
- plement to Type 2SC2073
APPLICATIONS
- Designed for use in general purpose power amplifier, vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Ic
Collector Current-Continuous
Total Power Dissipation
@ TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-150
-150
-5
-1.5
°c
-55~150 r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX...
