Datasheet Details
| Part number | IRF421 |
|---|---|
| Manufacturer | NJS |
| File Size | 136.58 KB |
| Description | N-Channel Power MOSFETs |
| Datasheet |
 IRF421 Datasheet
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Download the IRF421 datasheet PDF. This datasheet also covers the IRF420 variant, as both devices belong to the same n-channel power mosfets family and are provided as variant models within a single manufacturer datasheet.
| Part number | IRF421 |
|---|---|
| Manufacturer | NJS |
| File Size | 136.58 KB |
| Description | N-Channel Power MOSFETs |
| Datasheet |
IRF421 Datasheet
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• 2.2A and 2.5A, 450V and 500V • rDS(ON)= 3-Ofi and 4.0Q • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
^E.mL-don.du.cio'i Lpioducti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.S.A.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRF421 | N-Channel Power MOSFET | ART CHIP |
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IRF421 | N-Channel MOSFET Transistor | Inchange Semiconductor |
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IRF421 | N-Channel Power MOSFET | Fairchild Semiconductor |
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IRF421 | N-Channel Power MOSFET | Samsung semiconductor |
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IRF421 | N-Channel Power MOSFET | Intersil Corporation |
| Part Number | Description |
|---|---|
| IRF420 | N-Channel Power MOSFETs |
| IRF422 | N-Channel Power MOSFETs |
| IRF423 | N-Channel Power MOSFETs |