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NTE

2N3055 Datasheet Preview

2N3055 Datasheet

Silicon NPN Power Transistor

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2N3055
Silicon NPN Power Transistor
Audio Power Amp, Medium Speed Switch
TO3 Type Package
Description:
The 2N3055 is a silicon NPN transistor in a TO3 type case designed for general purpose switching
and amplifier applications.
Features:
D DC Current Gain: hFE = 20 70 @ IC = 4A
D CollectorEmitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A
D Excellent Safe Operating Area
Absolute Maximum Ratings:
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
CollectorEmitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
CollectorBase Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
EmitterBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Total
DDeveircaeteDAisbsoipvaeti2o5n(CTC.
=
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. . . . 115W
0.657W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +200C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.52C/W
Note 1. Maximum Ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress limit values (not normal operating conditions) and
are not valid simultaneously. If these limits are exceeded, device functional operation is not
implied, damage may occur and reliability may be affected.
Electrical Characteristics: (TC =+25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
CollectorEmitter Sustaining Voltage
CollectorEmitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus)
VCER(sus)
ICEO
ICEX
IEBO
IC = 200mA, IB = 0, Note 2
IC = 200mA, RBE = 100, Note 2
VCE = 30V, IB = 0
VCE = 100V, VBE(off) = 1.5V
VCE = 100V, VBE(off) = 1.5V, TC = +150C
VBE = 7V, IC = 0
60
70
−−V
−−V
0.7 mA
1.0 mA
5.0 mA
5.0 mA
Note 2. Pulse Test: Pulse Width 300s. Duty Cycle 2%.




NTE

2N3055 Datasheet Preview

2N3055 Datasheet

Silicon NPN Power Transistor

No Preview Available !

Electrical Characteristics (Cont’d): (TC =+25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 2)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter ON Voltage
Second Breakdown
hFE
VCE(sat)
VBE(on)
IC = 4A, VCE = 4V
IC = 10A, VCE = 4V
IC = 4A, IB = 400mA
IC = 10A, IB = 3.3A
IC = 4A, VCE = 4V
20 70
5−−
− − 1.1 V
− − 3.0 V
− − 1.5 V
Second Breakdown Collector Current
with Base Forward Biased
Is/b VCE = 40V, t = 1.0s; Nonrepetitive
2.87 − − A
Dynamic Characteristics
Current GainBandwidth Product
SmallSignal Current Gain
SmallSignal Current Gain Cutoff
Frequency
fT IC = 500mA, VCE = 10V, f = 1MHz
hfe IC = 1A, VCE = 4V, f = 1kHz
fhfe VCE = 4V, IC = 1A, f = 1kHz
2.5 − − MHz
15 120
10 − − kHz
Note 2. Pulse Test: Pulse Width 300s. Duty Cycle 2%.
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
.215 (5.45)
.430
(10.92)
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case


Part Number 2N3055
Description Silicon NPN Power Transistor
Maker NTE
Total Page 2 Pages
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