D DC Current Gain: hFE = 20 − 70 @ IC = 4A D Collector−Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Rati.

Features: D DC Current Gain: hFE = 20 − 70 @ IC = 4A D Collector−Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ I.

The 2N3055 is a silicon NPN transistor in a TO3 type case designed for general purpose switching and amplifier applications. Features: D DC Current Gain: hFE = 20 − 70 @ IC = 4A D Collector−Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4.

2N3053

2N3053A

2N3054

2N3054A

2N3055A

2N3055AG

2N3055B

2N3055E

2N3055ESMD

2N3055G

2N3055H

2N3055HV

2N3056