D Gain Ranged Specified at 1A and 3A D Low Collector−Emitter Saturation Voltage: VCE9sat) = 0.5V (Typ) @ IC = 5A, IB = 500mA D Excellent Safe Operating Areas Absolute M.

Features: D Gain Ranged Specified at 1A and 3A D Low Collector−Emitter Saturation Voltage: VCE9sat) = 0.5V (Typ) @ IC .

The 2N3714 is a silicon NPN transistor in a TO−3 type package designed for medium speed switching and amplifier applications. Features: D Gain Ranged Specified at 1A and 3A D Low Collector−Emitter Saturation Voltage: VCE9sat) = 0.5V (Typ) @ IC = 5A.

2N3710

2N3711

2N3712

2N3713

2N3715

2N3716

2N3716X

2N3719

2N3700

2N3700DCSM

2N3700HR

2N3700S

2N3700UB