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NTE

MMBT3906 Datasheet Preview

MMBT3906 Datasheet

Silicon PNP Transistor

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MMBT3906
Silicon PNP Transistor
General Purpose Amp, Surface Mount
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total
Device Dissipation (Note
Derate above +25C . .
2),
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. . 350mW
2.8mW/C
Thermal Resistance, JunctiontoAmbient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 375C/W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C
Note 1. These are steadystate limits and are based on a maximum junction temperature of +150C.
Note 2. Device is mounted on FR4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Breakdown Voltage
CollectorBase Breakdown Voltage
EmitterBase Breakdown Voltage
Base CutOff Current
Collector Cutoff Current
ON Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
IC = 1mA, IB = 0, Note 3
IC = 10A, IE = 0
IE = 10A, IC = 0
VCE = 30V, VBE = 3V
VCE = 30V, VBE = 3V
DC Current Gain (Note 3)
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
hFE
VCE(sat)
VBE(sat)
VCE = 1V, IC = 0.1mA
VCE = 1V, IC = 1mA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 50mA
VCE = 1V, IC = 100mA
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
Min Typ Max Unit
40 − − V
40 − − V
5 − −V
− − 50 nA
− − 50 nA
60
80
100 300
60
30
− − 0.25 V
− − 0.40 V
0.65 0.85 V
− − 0.95 V




NTE

MMBT3906 Datasheet Preview

MMBT3906 Datasheet

Silicon PNP Transistor

No Preview Available !

Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
SmallSignal Characteristics
Current GainBandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
fT IC = 10mA, VCE = 20V, f = 100MHz 250 − − MHz
Cobo VCB = 5V, IE = 0, f = 100kHz
− − 4.5 pF
Cibo VEB = 0.5V, IC = 0, f = 100kHz
− − 10 pF
NF VCE = 5V, IC = 100A, RS = 1k, − − 4 dB
f = 10Hz to 15.7kHz
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
td VCC = 3V, VBE = 0.5V,
tr IC = 10mA, IB1 = 1mA
ts VCC = 3V, IC = 10mA,
tf IB1 = IB2 = 1mA
− − 35 ns
− − 35 ns
− − 225 ns
− − 75 ns
Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
.016 (0.48)
C .098
(2.5)
B E Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.007 (0.2)
.051
(1.3)


Part Number MMBT3906
Description Silicon PNP Transistor
Maker NTE
Total Page 2 Pages
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