NTE103
Description
The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium-speed saturated switching applications.
Key Features
- Low Collector-Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA
- High Emitter-Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20µA