• Part: NTE103
  • Description: Germanium Complementary Transistors
  • Category: Transistor
  • Manufacturer: NTE Electronics
  • Size: 24.54 KB
NTE103 Datasheet (PDF) Download
NTE Electronics
NTE103

Description

The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium-speed saturated switching applications.

Key Features

  • Low Collector-Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA
  • High Emitter-Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20µA