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NTE102 - Germanium Complementary Transistors

General Description

The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium

speed saturated switching applications.

Key Features

  • D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter.
  • Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20µA Absolute Maximum Ratings: Collector.
  • Base Voltage, VCBO.
  • 25V Collector.
  • Emitter Voltage, VCES.
  • . . . . 24V Emitter.
  • Base Voltage.

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Datasheet Details

Part number NTE102
Manufacturer NTE Electronics (defunct)
File Size 24.54 KB
Description Germanium Complementary Transistors
Datasheet download datasheet NTE102 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE102 (PNP) & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter–Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20µA Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .