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NTE103 Datasheet Germanium Complementary Transistors

Manufacturer: NTE Electronics (defunct)

Overview: NTE102 (PNP) & NTE103 (NPN) Germanium plementary Transistors Power Output,.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number NTE103
Manufacturer NTE Electronics (defunct)
File Size 24.54 KB
Description Germanium Complementary Transistors
Datasheet NTE103 NTE102 Datasheet (PDF)

General Description

: The NTE102 (PNP) and NTE103 (NPN) are Germanium plementary transistors designed for medium–speed saturated switching applications.

Key Features

  • D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter.
  • Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20µA Absolute Maximum Ratings: Collector.
  • Base Voltage, VCBO.
  • 25V Collector.
  • Emitter Voltage, VCES.
  • . . . . 24V Emitter.
  • Base Voltag.

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