NTE221 mosfet equivalent, mosfet.
D Extremely Low Feedback Capacitance D High Power Gain Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain
–to
–Source .
Description: The NTE221 is an N
–channel depletion type, dual
–insulated gate, field
&n.
The NTE221 is an N
–channel depletion type, dual
–insulated gate, field
–effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF
.
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