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NTE2332 - Darlington Silicon NPN Transistor

Description

The NTE2332 Darlington transistor is especially well suited for use in switching of L load motor drivers, printer hammer drivers, relay drivers, etc.

Features

  • D High DC Current Gain D Large Current Capacity and Wide ASO D Contains 60 ±10V Avalanche Diode Between Collector and Base D Uniformity in Collector.
  • to.
  • Base Breakdown Voltage Due to Adoption of Accurate Impurity Diffusion Process D 25mJ Reverse Energy Rating Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified) Collector to Base Voltage, VCBO,.
  • . . . . 60 ±10V Collector to Emitter Voltag.

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Datasheet Details

Part number NTE2332
Manufacturer NTE
File Size 23.51 KB
Description Darlington Silicon NPN Transistor
Datasheet download datasheet NTE2332 Datasheet
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Full PDF Text Transcription

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NTE2332 Darlington Silicon NPN Transistor w/ Internal Damper & Zener Diode Description: The NTE2332 Darlington transistor is especially well suited for use in switching of L load motor drivers, printer hammer drivers, relay drivers, etc. Features: D High DC Current Gain D Large Current Capacity and Wide ASO D Contains 60 ±10V Avalanche Diode Between Collector and Base D Uniformity in Collector–to–Base Breakdown Voltage Due to Adoption of Accurate Impurity Diffusion Process D 25mJ Reverse Energy Rating Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified) Collector to Base Voltage, VCBO, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V Collector to Emitter Voltage, VCEO, . . . . . . . . . . . . . . . . . . . . . . . . . .
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