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NTE2351 - Silicon Complementary Transistors

Features

  • D High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A D Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
  • Base Voltage, VCBO.
  • . . . . 100V Collector.
  • Emitter Voltage, VCEO.
  • . . . . 80V Emitter.
  • Base Voltage, VE.

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Datasheet Details

Part number NTE2351
Manufacturer NTE
File Size 24.31 KB
Description Silicon Complementary Transistors
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Full PDF Text Transcription

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NTE2351 (NPN) & NTE2352 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Features: D High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A D Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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