NTE243 Datasheet - NTE

Silicon Complementary Transistors

* D High DC Current Gain: hFE = 3000 Typ @ IC = 4A D Collector

* Emitter Sustaining Voltage: VCEO(sus) = 80V Min @ 100mA D Low Collector

* Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 4A = 3V Max @ IC = 8A D Monolithic Construction with Built

* In Base

* Emitter Shunt

NTE243

NTE

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Silicon complementary transistors.

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NTE243 Silicon Complementary Transistors NTE

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