NTE245 transistors equivalent, silicon complementary transistors.
D High DC Current Gain: hFE = 4000 Typ @ IC = 5A D Monolithic Construction with Built
–In Base
–Emitter Shunt Resistors Absolute Maximum Ra.
Features: D High DC Current Gain: hFE = 4000 Typ @ IC = 5A D Monolithic Construction with Built
–In Base.
The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: D High DC Current Gain: hFE = 4000 Typ @ IC = 5A D Monolith.
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