NTE249 transistors equivalent, silicon complementary transistors.
D High DC Current Gain: hFE = 3500 Typ @ IC = 10A D Monolithic Construction with Built
–In Base
–Emitter Shunt Resistors Absolute Maximum R.
Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 10A D Monolithic Construction with Built
–In Bas.
The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications. Features: D High DC Current Gain: hFE = 3500 Typ @ IC =.
Image gallery
TAGS
Download (Size : 25.18KB)
