NTE275 transistors equivalent, silicon complementary transistors.
D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector
–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector
–Emit.
Features:
D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector
–Emitter Saturation Voltage:.
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