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NTE275 Datasheet - NTE

Silicon Complementary Transistors

NTE275 Features

* D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector

* Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector

* Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Monolithic Construction with Built

* In Base

* Emitter Shunt Resistors Absolute Maximum

NTE275 Datasheet (25.78 KB)

Preview of NTE275 PDF

Datasheet Details

Part number:

NTE275

Manufacturer:

NTE

File Size:

25.78 KB

Description:

Silicon complementary transistors.

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NTE275 Silicon Complementary Transistors NTE

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