D High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector
  –Em.

Features: D High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = .

The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications. Features: D High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA D H.

NTE4000

NTE4001B

NTE4002B

NTE4006B

NTE4007

NTE4008B

NTE4009

NTE4011B

NTE4012B

NTE4013B

NTE4014B

NTE4015B

NTE4016B