D High DC Current Gain: hFE = 2500 (Typ) at IC = 1A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 100V (Min) at IC = 30mA D Low Collector−Emitter Saturation Voltag.

Features: D High DC Current Gain: hFE = 2500 (Typ) at IC = 1A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 100V .

The TIP112 is a silicon NPN Darlington transistor in a TO−220 type package designed for general purpose amplifier and low−speed switching applications. Features: D High DC Current Gain: hFE = 2500 (Typ) at IC = 1A D Collector−Emitter Sustaining Volt.

TIP110

TIP110A

TIP111

TIP115

TIP116

TIP117

TIP117F

TIP119

TIP119-SW-82

TIP100

TIP101

TIP102

TIP105