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NTE578 - Silicon Rectifier Schottky Barrier / General Purpose

General Description

The NTE578 is a general purpose rectifier employing the Schottky Barrier principle in a large area metal to

silicon power diode.

of the art geometry

Key Features

  • epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low.
  • voltage, high.
  • frequency inverters, free wheeling diodes, and polarity protection diodes. Features: D Low Reverse Current D Low Stored Charge, Majority Carrier Conduction D Low Power Loss/High Efficiency D Highly Stable Oxide Passivated Junction D Guard.
  • Ring for Stress Protection D Low Forward Voltage D 150°C Operating Junction Temperature D High Surge Capac.

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Datasheet Details

Part number NTE578
Manufacturer NTE Electronics (defunct)
File Size 17.20 KB
Description Silicon Rectifier Schottky Barrier / General Purpose
Datasheet download datasheet NTE578 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE578 Silicon Rectifier Schottky Barrier, General Purpose Description: The NTE578 is a general purpose rectifier employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes. Features: D Low Reverse Current D Low Stored Charge, Majority Carrier Conduction D Low Power Loss/High Efficiency D Highly Stable Oxide Passivated Junction D Guard–Ring for Stress Protection D Low Forward Voltage D 150°C Operating Junction Temperature D High Surge Capacity Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM . . . . . . . . . .