NTE578 purpose equivalent, silicon rectifier schottky barrier / general purpose.
epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low
–voltage, high
–frequen.
The NTE578 is a general purpose rectifier employing the Schottky Barrier principle in a large area metal
–to
–silicon power diode. State
–of
–the art geometry features epitaxial constructio.
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