NTE578 Datasheet | NTE Electronics

Description : The NTE578 is a general purpose rectifier employing the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes. Features : D Low Reverse Current D Low Stored Charge, Majority Carrier Conduction D Low Power Loss/High Efficiency D Highly Stable Oxide Passivated Junction D Guard- Ring for Stress Protection D Low Forward Voltage D 150°C Operating Junction Temperature D High Surge Capacity Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM - - - - - - - - - . . 90V Working Peak Reverse Voltage, VRWM - - - - - - - - - . . . 90V DC Blocking Voltage, VR - - - - - - - - - - - - 90V Average Rectified Forward Current, IO (VR (equiv) ≤ 0.2VR(dc), RθJA = 50°C/W, P.C. Board Mounting, TA = +120°C) - . . . . 1A Nonrepetitive Peak Surge Current, IFSM (Surge applied at rated load conditions, half- wave single phase, 60Hz) - - . . . 25A Operating Junction Temperature Range, TJ - - - - - - . . . - 65° to +150°C Storage Temperature Range, Tstg - - - - - - - - . - 65° to +150°C Voltage Rate of Change (Rated VR), dv/dt - - - - - - - - . 10V/ns Thermal Resistance, Junction- to- Ambient, Rth JA - - - - - - - 1°C/W Electrical Characteristics: (TL = +25°C unless otherwise specified) Parameter Maximum Instanteous Forward Voltage...