• Part: 1PS10SB82
  • Description: Schottky barrier diode
  • Category: Diode
  • Manufacturer: NXP Semiconductors
  • Size: 172.46 KB
Download 1PS10SB82 Datasheet PDF
NXP Semiconductors
1PS10SB82
description An epitaxial Schottky barrier diode encapsulated in a SOD882 leadless ultra small plastic package. ESD sensitive device, observe handling precautions. 2. Features and benefits - Low forward voltage - Low diode capacitance - Leadless ultra small plastic package (1.0 mm x 0.6 mm x 0.48 mm) - Boardspace 1.17 mm² (approx. 10 % of SOT23) - Power dissipation parable to SOT23 3. Applications - UHF mixers - Sampling circuits - Modulators - Phase detectors - Mobile devices 4. Quick reference data Table 1. Quick reference data Symbol Parameter VR reverse voltage VF forward voltage Conditions IF = 30 m A; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C Min Typ Max Unit - - 15 V - - 700 m V 5. Pinning information Table 2. Pinning information Pin Symbol Description 1K cathode[1] 2A anode [1] The marking bar indicates the cathode. Simplified outline Transparent top view DFN1006-2 (SOD882) Graphic symbol KA aaa-003679 Nexperia Schottky barrier diode 6. Ordering...