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2PD2150 Datasheet, NXP

2PD2150 transistor equivalent, npn low vcesat transistor.

2PD2150 Avg. rating / M : 1.0 rating-11

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2PD2150 Datasheet

Features and benefits

s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to.

Application

s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) T.

Description

NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: 2PB1424. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and I.

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