Overview: NXP Semiconductors Technical Data Power Amplifier Module for LTE and 5G The A3M37TL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field--proven LDMOS power amplifiers are designed for TDD and FDD LTE systems.
3600–3800 MHz Typical LTE Performance: Pout = 7 W Avg., VDD = 26 Vdc, 1 20 MHz LTE,
Input Signal PAR = 8 dB @ 0.01% Probability on CCDF. (1) Carrier Center Frequency Gain (dB) ACPR (dBc) PAE (%) 3610 MHz 3700 MHz 3790 MHz 28.2 –27.6 39.2 28.2 –30.0 39.5 28.2 –30.7 38.8 3700–4100 MHz
Typical LTE Performance: Pout = 1.6 W Avg., VDD = 30 Vdc, 1 20 MHz LTE, Input Signal PAR = 8 dB @ 0.01% Probability on CCDF. (1) Carrier Center Frequency Gain (dB) ACPR (dBc) PAE (%) 3710 MHz 28.8 –35.9 19.9 3900 MHz 28.3 –38.2 19.6 4090 MHz 27.9 –35.0 18.0 1. All data measured with device soldered in NXP reference circuit.
