* Advanced high performance in
* package Doherty
* Designed for wide instantaneous bandwidth applications
* Greater negative gate
* source voltage range for improved Class C operation
* Able to withstand extremely high output VSWR and broadb
A3T21H360W23SR6 Datasheet (395.02 KB)
A3T21H360W23SR6
395.02 KB
Rf power ldmos transistor.
NXP Semiconductors Technical Data Document Number: A3T21H360W23S Rev. 0, 08/2017 RF Power LDMOS Transistor N Channel Enhancement Mod.
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