BAS416 Key Features
- Plastic SMD package
- Low leakage current: typ. 3 pA
- Switching time: typ. 0.8 µs
- Continuous reverse voltage: max. 75 V
- Repetitive peak reverse voltage: max. 85 V
- Repetitive peak forward current: max. 500 mA
- Part: BAS416
- Manufacturer: NXP Semiconductors (official site)
- Size: 68.61 KB
Other BAS416 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Kexin Semiconductor |
BAS416 | Low-leakage Diode |
Galaxy Microelectronics |
BAS416 | Switching Diode |
Good-Ark Semiconductor |
BAS416 | Small-Signal Fast Switching Diode |
Rectron |
BAS416 | Switching Diode |
Nexperia |
BAS416 | Low-leakage diode |
BAS416 Description
Epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small SOD323 SMD plastic package. PINNING PIN 1 2 DESCRIPTION cathode anode handbook, halfp1age 2 MAM406 Marking code: The marking bar indicates the cathode.
BAS416 Applications
- Low-leakage current applications in surface mounted