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BAS416 Datasheet - NXP

Low-leakage diode

BAS416 Features

* Plastic SMD package

* Low leakage current: typ. 3 pA

* Switching time: typ. 0.8 µs

* Continuous reverse voltage: max. 75 V

* Repetitive peak reverse voltage: max. 85 V

* Repetitive peak forward current: max. 500 mA. APPLICATIONS

* Low-leakage

BAS416 General Description

Epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small SOD323 SMD plastic package. PINNING PIN 1 2 DESCRIPTION cathode anode handbook, halfp1age 2 MAM406 Marking code: D4. The marking bar indicates the cathode. Fig.1 Simplified outline (SOD323) (SC-76) and sy.

BAS416 Datasheet (68.61 KB)

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Datasheet Details

Part number:

BAS416

Manufacturer:

NXP ↗

File Size:

68.61 KB

Description:

Low-leakage diode.
DISCRETE SEMICONDUCTORS DATA SHEET BAS416 Low-leakage diode Product data sheet Supersedes data of 2002 Nov 19 2004 Jan 26 NXP Semiconductors Low-le.

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