Rectron Semiconductor BAS416
Switching Diode
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 ℃) Symbol Parameter VRMS RMS ReverseVoltageVR(RMS) VRRM Repetitive Peak Reverse Voltage IFSM Non-Repetitive Peak Forward Current IF Continuous Forward Current PD Power Dissipation TJ Junction Temperature TSTG Storage Temperature *1 Pulse width = 1μsELECTRICAL CHARACTERISTICS
(Ta = 25 ℃) t=1μs Symbol Parameter Conditions BVR Breakdown Voltage IR = 100μA VR = 75V IR Reverse Current VR = 75V,Tj=150℃ Forward Voltage VF IF = 1mA IF = 10mA IF = 50mA IF = 150mA C Capacitance VR = 0V, f = 1MHz trr Reverse recovery time IF= IR=10mA, Irr=0.1×IR Value 71 100 4 200 250 150 -55 to +150 Min Max 100 5 80 0.9 1 1.1 1.25 4 3 Units V V A mA mW ℃ ℃ Units V nA V V V V pF us 2025-02/03 REV:B RATING AND CHARACTERISTICS CURVES (BAS416) Typical Instantaneous Forward Characteristics Typical Reverse Leakage Characteristics Power Derating Curve Capacitance vs Reverse voltage(VR) ? ?? ?? ? ? Ordering Information Package SOD323 Package Code -T Shipping Tape & Reel 3000pcs /7” Ree...