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BAS416 Datasheet PDF

NXP Semiconductors BAS416

The marking bar indicates the cathode.
Part No. BAS416
Datasheet BAS416 Download
Manufacturer
NXP Semiconductors
Description Low-leakage diode
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BAS416 datasheet page 1 preview

FEATURES

● Plastic SMD package
● Low leakage current: typ. 3 pA
● Switching time: typ. 0.8 µs
● Continuous reverse voltage: max. 75 V
● Repetitive peak reverse voltage: max. 85 V
● Repetitive peak forward current: max. 500 mA.

APPLICATIONS

● Low-leakage current applications in surface mounted circuits.

DESCRIPTION

Epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small SOD323 SMD plastic package. PINNING PIN 1 2

DESCRIPTION

cathode anode handbook, halfp1age 2 MAM406 Marking code: D4. The marking bar indicates the cathode. Fig.1 Simplified outline (SOD323) (SC-76) and symbol. ORDERING INFORMATION TYPE NUMBER BAS416 NAME − PACKAGE

DESCRIPTION

plastic surface mounted package; 2 leads VERSION SOD323 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VRRM VR IF IFRM IFSM Ptot Tstg Tj PARAMETER CONDITIONS repetitive peak reverse voltage continuous reverse voltage continuous forward current see Fig.2 repetitive peak for...
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