BAS416 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BAS416 Low-leakage diode Product data sheet Supersedes data of 2002 Nov 19 2004 Jan 26 NXP Semiconductors Low-leakage diode Product data sheet Features - Plastic SMD package - Low leakage current: typ. 3 pA - Switching time: typ. 0.8 µs - Continuous reverse voltage: max. 75 V - Repetitive peak reverse voltage: max. 85 V - Repetitive peak forward current: max. 500 mA. APPLICATIONS - Low-leakage current applications in surface mounted circuits. DESCRIPTION Epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small SOD323 SMD plastic package. PINNING PIN 1 2 DESCRIPTION cathode anode handbook, halfp1age MAM406...