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BAS416 - Low-leakage diode

General Description

Epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small SOD323 SMD plastic package.

Marking code: D4.

The marking bar indicates the cathode.

Key Features

  • Plastic SMD package.
  • Low leakage current: typ. 3 pA.
  • Switching time: typ. 0.8 µs.
  • Continuous reverse voltage: max. 75 V.
  • Repetitive peak reverse voltage: max. 85 V.
  • Repetitive peak forward current: max. 500 mA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BAS416 Low-leakage diode Product data sheet Supersedes data of 2002 Nov 19 2004 Jan 26 NXP Semiconductors Low-leakage diode Product data sheet BAS416 FEATURES • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 µs • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. APPLICATIONS • Low-leakage current applications in surface mounted circuits. DESCRIPTION Epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small SOD323 SMD plastic package. PINNING PIN 1 2 DESCRIPTION cathode anode handbook, halfp1age 2 MAM406 Marking code: D4. The marking bar indicates the cathode. Fig.