BC818-40W Datasheet | NXP Semiconductors

FEATURES - High current (max. 500 m A) - Low voltage (max. 45 V). APPLICATIONS - General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT323 plastic package. PNP plement: BC807W. MARKING TYPE NUMBER BC817W BC817-16W BC817-25W BC817-40W Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 MARKING CODE(1) 6D∗ 6A∗ 6B∗ 6C∗ TYPE NUMBER BC818W BC818-16W BC818-25W BC818-40W MARKING CODE(1) 6H∗ 6E∗ 6F∗ 6G∗ 1 Top view 2 MAM062 BC817W PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 1 2 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base; IC = 10 m A open collector - - - - - - - - 65 - - 65 MIN. MAX. 50 45 5 500 1 200 200 +150 150 +150 V V V m A A m A m W °C °C °C UNIT 1999 Apr 15 Philips Semiconductors Product specification NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain BC817W BC817-16W BC817-25W BC817-40W DC current gain VCEsat VBE Cc f T Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector-emitter saturation voltage base-emitter voltage collector capacitance transition frequency IC = 500 m A; VCE = 1 V; note 1 IC = 500 m A; IB = 50 m A; note 1 IC = 500 m A; VCE = 1 V; note 1 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 m A; VCE = 5 V; f = 100 MHz CONDITIONS IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 150 °C IC = 0;...