BC850BW Datasheet | NXP Semiconductors

FEATURES - Low current (max. 100 m A) - Low voltage (max. 45 V). APPLICATIONS - Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION NPN transistor in a SOT323 plastic package. PNP plements: BC859W and BC860W. MARKING TYPE NUMBER BC849BW BC849CW Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 MARKING CODE(1) 2B∗ 2C∗ TYPE NUMBER BC850BW BC850CW MARKING CODE(1) 2F∗ 2G∗ handbook, halfpage BC849W; BC850W PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 1 2 1 Top view 2 MAM062 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage BC849W BC850W VCEO collector-emitter voltage BC849W BC850W VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base - - - - - - - - 65 - - 65 30 45 5 100 200 200 200 +150 150 +150 V V V m A m A m A m W °C °C °C CONDITIONS open emitter - - 30 50 V V MIN. MAX. UNIT 1999 Apr 12 Philips Semiconductors Product specification NPN general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain BC849BW; BC850BW BC849CW; BC850CW VCEsat VBE Cc Ce f T F collector-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure IC = 10 m A; IB = 0.5 m A IC = 100 m A; IB = 5 m A; note 1 IC = 2 m A; VCE = 5 V IC = 10 m A; VCE = 5 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 500 m V; f = 1 MHz IC = 10 m A; VCE = 5 V; f = 100 MHz IC = 200 µA;...