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NXP Semiconductors Electronic Components Datasheet

BCP53-10 Datasheet

PNP medium power transistors

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D087
BCP51; BCP52; BCP53
PNP medium power transistors
Product specification
Supersedes data of 1997 Apr 08
1999 Apr 08


NXP Semiconductors Electronic Components Datasheet

BCP53-10 Datasheet

PNP medium power transistors

No Preview Available !

Philips Semiconductors
PNP medium power transistors
Product specification
BCP51; BCP52; BCP53
FEATURES
High current (max. 1 A)
Low voltage (max. 80 V)
Medium power (max. 1.3 W).
APPLICATIONS
Audio, telephony and automotive applications
Thick and thin-film circuits.
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
handbook, halfpage
4
2, 4
DESCRIPTION
PNP medium power transistor in a SOT223 plastic
package. NPN complements: BCP54, BCP55 and BCP56.
1
1
Top view
2
3
MAM288
3
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
BCP51
BCP52
BCP53
collector-emitter voltage
BCP51
BCP52
BCP53
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
MIN.
MAX.
UNIT
− −45 V
− −60 V
100
V
− −45 V
− −60 V
− −80 V
− −5 V
− −1 A
− −1.5 A
− −0.2 A
1.3 W
65
+150
°C
150 °C
65
+150
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 08
2


Part Number BCP53-10
Description PNP medium power transistors
Maker NXP
Total Page 8 Pages
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