BCP53-10 Datasheet | NXP Semiconductors

FEATURES - High current (max. 1 A) - Low voltage (max. 80 V) - Medium power (max. 1.3 W). APPLICATIONS - Audio, telephony and automotive applications - Thick and thin-film circuits. DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN plements: BCP54, BCP55 and BCP56. 1 Top view handbook, halfpage BCP51; BCP52; BCP53 PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION 2, 4 1 3 2 3 MAM288 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCP51 BCP52 BCP53 VCEO collector-emitter voltage BCP51 BCP52 BCP53 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base - - - - - - - - - 65 - - 65 - 45 - 60 - 80 - 5 - 1 - 1.5 - 0.2 1.3 +150 150 +150 V V V V A A A W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter - - - - 45 - 60 - 100 V V V MIN. MAX. UNIT 1999 Apr 08 Philips Semiconductors Product specification PNP medium power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point BCP51; BCP52;...