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2SB772 PNP medium power transistor Features ■ High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay

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LM217M, LM317M Datasheet Medium current 1.2 to 37 V adjustable voltage regulator DPAK SOT223 Features • Output voltage range: 1.2 to 37 V • Output

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BC54xPAS-Q series 45 V, 1 A NPN medium power transistors 27 April 2023 Product data sheet 1. General description NPN medium power transistor series

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MwT-PH7F 28 GHz Medium Power AlGaAs/InGaAs pHEMT Features: • 24.5 dBm of Power at 18 GHz • 15 dB typical Small Signal Gain at 18 GHz • 45% typical P

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BC54xPAS-Q series 45 V, 1 A NPN medium power transistors 27 April 2023 Product data sheet 1. General description NPN medium power transistor series

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2SD882 NPN medium power transistor Features ■ High current ■ Low saturation voltage ■ Complement to 2SB772 Applications ■ Voltage regulation ■ Relay

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MITSUBISHI DIODE MODULES RM50TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM50TC-M,-H,-24,-2H • IO • VRRM DC output current

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ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 o

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www.vishay.com VS-1N1 A, VS-1N36..A Series Vishay Semiconductors Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A DO-4 (DO-203AA) PRI

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NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 – FEBRUARY 1995 FEATURES * VCEV=50V * Very Low Saturation Voltages * High Gain * 20 Amps

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www.vishay.com VS-1N1 A, VS-1N36..A Series Vishay Semiconductors Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A DO-4 (DO-203AA) PRI

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Features  BVCEO > -60V  BVECO > -7V  IC = 5A High Continuous Current  Low Saturation Voltage VCE(sat) < -80mV @ 1A  RCE(sat) = 50mΩ  Complementa

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ZXTP19020DFF 20V PNP MEDIUM POWER TRANSISTOR IN SOT23F Features  BVCEO > -20V  BVECO > -4V  IC = -5.5A Continuous Collector Current  ICM = -15A P

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1N1 A, 1N36..A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V • High

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PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Wa

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www.DataSheet4U.com ZXTN2005Z 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 25V : RSAT = 25m ; IC = 5.5A DESCRIPTION Packa

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ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC(cont) = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5

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DISCRETE SEMICONDUCTORS DATA SHEET M3D110 www.DataSheet.net/ BC140; BC141 NPN medium power transistors Product specification Supersedes data of Sep

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Features ■ Size: 8 mm diameter, 6 mm length ■ Low capacitance ■ High insulation resistance ■ RoHS compliant* ■ UL Recognized Additional Informa

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BCP53; BCX53; BC53PA 80 V, 1 A PNP medium power transistors Rev. 9 — 19 October 2011 Product data sheet 1. Product profile 1.1 General description

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