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NXP Semiconductors Electronic Components Datasheet

BCP54-16 Datasheet

NPN medium power transistors

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D087
BCP54; BCP55; BCP56
NPN medium power transistors
Product specification
Supersedes data of 1997 Apr 08
1999 Apr 08


NXP Semiconductors Electronic Components Datasheet

BCP54-16 Datasheet

NPN medium power transistors

No Preview Available !

Philips Semiconductors
NPN medium power transistors
Product specification
BCP54; BCP55; BCP56
FEATURES
High current (max. 1 A)
Low voltage (max. 80 V).
APPLICATIONS
Switching.
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
DESCRIPTION
NPN medium power transistor in a SOT223 plastic
package. PNP complements: BCP51, BCP52 and BCP53.
handbook, halfpage
4
2, 4
1
1
Top view
2
3
MAM287
3
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
collector-base voltage
BCP54
BCP55
BCP56
VCEO
collector-emitter voltage
BCP54
BCP55
BCP56
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
MIN. MAX. UNIT
45 V
60 V
100 V
45 V
60 V
80 V
5V
1A
1.5 A
0.2 A
1.33 W
65 +150 °C
150 °C
65 +150 °C
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 08
2


Part Number BCP54-16
Description NPN medium power transistors
Maker NXP
Total Page 8 Pages
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