BCP56-10 Datasheet | NXP Semiconductors

FEATURES - High current (max. 1 A) - Low voltage (max. 80 V). APPLICATIONS - Switching. DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP plements: BCP51, BCP52 and BCP53. handbook, halfpage BCP54; BCP55; BCP56 PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION 2, 4 1 3 1 Top view 2 3 MAM287 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCP54 BCP55 BCP56 VCEO collector-emitter voltage BCP54 BCP55 BCP56 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base - - - - - - - - - 65 - - 65 45 60 80 5 1 1.5 0.2 1.33 +150 150 +150 V V V V A A A W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter - - - 45 60 100 V V V MIN. MAX. UNIT 1999 Apr 08 Philips Semiconductors Product specification NPN medium power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point BCP54; BCP55; BCP56 CONDITIONS note 1 VALUE 94 13 UNIT K/W K/W 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 125 °C IC = 0; VEB = 5 V IC = 5 m A;...