BCW60D Datasheet | NXP Semiconductors

FEATURES - Low current (max. 100 m A) - Low voltage (max. 32 V). APPLICATIONS - General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP plements: BCW61 series. handbook, halfpage BCW60 series PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 MARKING TYPE NUMBER BCW60B BCW60C BCW60D Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. 32 32 5 100 200 200 250 +150 150 +150 MARKING CODE(1) AB∗ AC∗ AD∗ Top view MAM255 Fig.1 Simplified outline (SOT23) and symbol. UNIT V V V m A m A m A m W °C °C °C 1999 Apr 22 Philips Semiconductors Product specification NPN general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain BCW60B BCW60C BCW60D DC current gain BCW60B BCW60C BCW60D DC current gain BCW60B BCW60C BCW60D VCEsat VBEsat VBE collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage IC = 10 m A; IB = 0.25 m A IC = 50 m A; IB = 1.25 m A IC = 10 m A; IB = 0.25 m A IC = 50 m A; IB = 1.25 m A IC = 10 µA; VCE = 5 V IC = 2 m A; VCE = 5 V IC = 50 m A; VCE = 1 V Cc Ce f T F Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector capacitance emitter capacitance transition frequency noise figure IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 m A; VCE = 5 V; f = 100 MHz; note 1 IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f...