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NXP Semiconductors Electronic Components Datasheet

BD136 Datasheet

PNP power transistors

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DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D100
BD136; BD138; BD140
PNP power transistors
Product specification
Supersedes data of 1997 Mar 26
1999 Apr 12


NXP Semiconductors Electronic Components Datasheet

BD136 Datasheet

PNP power transistors

No Preview Available !

Philips Semiconductors
PNP power transistors
Product specification
BD136; BD138; BD140
FEATURES
High current (max. 1.5 A)
Low voltage (max. 80 V).
APPLICATIONS
General purpose power applications, e.g. driver stages
in hi-fi amplifiers and television circuits.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector, connected to metal part of
mounting surface
base
DESCRIPTION
PNP power transistor in a TO-126; SOT32 plastic
package. NPN complements: BD135, BD137 and BD139.
handbook, halfpage
2
3
1
1 2 3 Top view
MAM272
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BD136
BD138
BD140
collector-emitter voltage
BD136
BD138
BD140
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tmb 70 °C
MIN.
MAX.
UNIT
− −45 V
− −60 V
100
V
− −45 V
− −60 V
− −80 V
− −5 V
− −1.5 A
− −2 A
− −1 A
8W
65
+150
°C
150 °C
65
+150
°C
1999 Apr 12
2


Part Number BD136
Description PNP power transistors
Maker NXP
Total Page 8 Pages
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