Datasheet4U Logo Datasheet4U.com

BFG135 - NPN 7GHz wideband transistor

Datasheet Summary

Description

NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications.

The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level.

📥 Download Datasheet

Datasheet preview – BFG135

Datasheet Details

Part number BFG135
Manufacturer NXP
File Size 269.06 KB
Description NPN 7GHz wideband transistor
Datasheet download datasheet BFG135 Datasheet
Additional preview pages of the BFG135 datasheet.

📁 Similar Datasheet

  • BFG135A - NPN Silicon RF Transistor (Siemens Semiconductor Group)
  • BFG135A - NPN Silicon RF Transistor (Infineon Technologies AG)
  • BFG193 - NPN Transistor (INCHANGE)
  • BFG193 - NPN Silicon RF Transistor (Siemens Semiconductor Group)
  • BFG193 - NPN Silicon RF Transistor (Infineon Technologies AG)
  • BFG194 - PNP Silicon RF Transistor (Siemens Semiconductor Group)
  • BFG196 - NPN Silicon RF Transistor (Siemens Semiconductor Group)
  • BFG196 - NPN Silicon RF Transistor (Infineon Technologies AG)
  • BFG198 - NPN TRANSISTOR (UTC)
  • BFG19S - NPN Silicon RF Transistor (Siemens Semiconductor Group)
Other Datasheets by NXP
  • BFG10 - NPN 2 GHz RF power transistor
  • BFG10W - UHF power transistor
  • BFG10X - UHF power transistor
  • BFG11 - NPN 2 GHz RF power transistor
  • BFG11W - NPN 2 GHz power transistor
  • BFG16A - NPN 2 GHz wideband transistor
  • BFG17A - NPN 3 GHz wideband transistor
  • BFG197 - NPN 7 GHz wideband transistor

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors NPN 7GHz wideband transistor Product specification BFG135 DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level. The distribution of the active areas across the surface of the device gives an excellent temperature profile. PINNING PIN 1 2 3 4 DESCRIPTION emitter base emitter collector lfpage 4 1 Top view 2 3 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN.
Published: |