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NXP Semiconductors Electronic Components Datasheet

BFG135 Datasheet

NPN 7GHz wideband transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG135
NPN 7GHz wideband transistor
Product specification
File under discrete semiconductors, SC14
1995 Sep 13


NXP Semiconductors Electronic Components Datasheet

BFG135 Datasheet

NPN 7GHz wideband transistor

No Preview Available !

Philips Semiconductors
NPN 7GHz wideband transistor
Product specification
BFG135
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic SOT223 envelope,
intended for wideband amplifier
applications. The small emitter
structures, with integrated
emitter-ballasting resistors, ensure
high output voltage capabilities at a
low distortion level.
The distribution of the active areas
across the surface of the device gives
an excellent temperature profile.
PINNING
PIN
1
2
3
4
DESCRIPTION
emitter
base
emitter
collector
age 4
123
Top view
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
VCBO
VCEO
IC
Ptot
hFE
fT
GUM
Vo
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power
gain
output voltage
open emitter
open base
up to Ts = 145 °C (note 1)
IC = 100 mA; VCE = 10 V; Tj = 25 °C
IC = 100 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
IC = 100 mA; VCE = 10 V; f = 500 MHz;
Tamb = 25 °C
IC = 100 mA; VCE = 10 V; f = 800 MHz;
Tamb = 25 °C
dim = 60 dB; IC = 100 mA; VCE = 10 V;
RL = 75 ; Tamb = 25 °C;
f(p+qr) = 793.25 MHz
80
TYP.
130
7
16
12
850
MAX.
25
15
150
1
UNIT
V
V
mA
W
GHz
dB
dB
mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
CONDITIONS
up to Ts = 145 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
1995 Sep 13
2
MIN.
65
MAX.
25
15
2
150
1
150
175
UNIT
V
V
V
mA
W
°C
°C


Part Number BFG135
Description NPN 7GHz wideband transistor
Maker NXP
Total Page 12 Pages
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