Datasheet4U Logo Datasheet4U.com

BFQ68 - NPN 4 GHz wideband transistor

Description

NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap.

All leads are isolated from the stud.

Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties.

Features

  • very high output voltage capabilities. It is primarily intended for final stages in MATV system amplifiers, and is also suitable for use in low power band IV and V equipment. QUICK.

📥 Download Datasheet

📁 Similar Datasheet

  • BFQ60 - LOW NOISE NPN SILICON MICROVAVE TRANSISTOR UP TO 2 GHz (Siemens Semiconductor Group)
  • BFQ65 - Silicon NPN Planar RF Transistor (TEMIC)
  • BFQ65 - BFQ65 (ETC)
  • BFQ67 - Silicon NPN Planar RF Transistor (Vishay Telefunken)
  • BFQ67 - Silicon NPN wideband transistor (TY Semiconductor)
  • BFQ67R - Silicon NPN Planar RF Transistor (Vishay Telefunken)
  • BFQ67W - Silicon NPN Planar RF Transistor (Vishay Telefunken)
  • BFQ67W - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • BFQ69 - NPN Silicon RF Transistor (Siemens Semiconductors)
  • BFQ17 - RF TRANSISTOR (Motorola)
Other Datasheets by NXP
  • BFQ621 - NPN 7 GHz wideband transistor
  • BFQ67 - NPN 8 GHz wideband transistor
  • BFQ67T - NPN 8 GHz wideband transistor
  • BFQ67W - NPN 8 GHz wideband transistor
  • BFQ131 - NPN video transistor
  • BFQ135 - NPN 6.5 GHz wideband transistor
  • BFQ136 - NPN 4 GHz wideband transistor
  • BFQ149 - PNP 5GHz wideband transistor

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET BFQ68 NPN 4 GHz wideband transistor Product speciļ¬cation File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product speciļ¬cation NPN 4 GHz wideband transistor DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. It features very high output voltage capabilities. It is primarily intended for final stages in MATV system amplifiers, and is also suitable for use in low power band IV and V equipment.
Published: |