BFT92 Datasheet | NXP Semiconductors

description PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. NPN plements are BFR92 and BFR92A. 1.2 Features and benefits - High power gain - Low intermodulation distortion 1.3 Applications - Oscilloscopes and spectrum analyzers - Radar systems - RF wideband amplifiers 1.4 Quick reference data Table 1. Symbol VCBO VCEO IC Ptot f T Cre GUM Quick reference data Parameter collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency feedback capacitance maximum unilateral power gain noise figure dim intermodulation distortion Conditions open emitter open base up to Ts = 95 C IC = - 14 m A; VCE = - 10 V; f = 500 MHz IC = - 2 m A; VCE = - 10 V; f = 1 MHz IC = - 14 m A; VCE = - 10 V; f = 500 MHz Tamb = 25 C; IC = - 5 m A; VCE = - 10 V; f = 500 MHz; Tamb = 25 C IC = - 14 m A; VCE = - 10 V; RL = 75 ; Vo = 150 m V; Tamb = 25 C; f(p + q-r) = 493.25 MHz [1] Ts is the temperature at the soldering point of the collector tab. Min Typ Max Unit - - - 20 V - - - 15 V - - - 25 m A [1] - - 300 m W - 5 - GHz - 0.7 - p F -...