BLA1011-300 Datasheet | NXP Semiconductors

.. Avionics LDMOS transistors Rev. 01 - 3 April 2007 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit; tp = 50 µs; δ = 2 %. Mode of operation Pulsed class-AB f (MHz) 1030 to 1090 IDq (mA) 150 VDS (V) 32 PL (W) 300 Gp (dB) 16.5 ηD (%) 57 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical performance at frequencies between 1030 MHz...