BLA1011-300 - Avionics LDMOS transistors

Description

300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit; tp = 50 µs; δ = 2 %.

Features

• I Typical performance at frequencies between 1030 MHz and 1090 MHz, a supply voltage of 32 V, an IDq of 150 mA, a tp of 50 µs and a δ of 2 %: N Output power = 300 W N Power gain = 16.5 dB (typ) N Efficiency = 57 % (typ) I Easy power control I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for operation in 1030 MHz to 1090 MHz band I Internally matched for ease of use 1.3.