BLA1011-300 datasheet, transistors equivalent, NXP

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BLA1011-300 Features and benefits

I Typical performance at frequencies between 1030 MHz and 1090 MHz, a supply voltage of 32 V, an IDq of 150 mA, a tp of 50 µs and a δ of 2 %: N Output power = 300 W N Pow.

BLA1011-300 Application

at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common sourc.

BLA1011-300 Description

300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit; tp = 50 µs; δ = 2 %. Mode of.

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