| Part number | BLA1011-300 |
|---|---|
| Datasheet | BLA1011-300_PhilipsSemiconductors.pdf |
| File Size | 90.54 KB |
| Manufacturer | NXP Semiconductors |
| Description | Avionics LDMOS transistors |
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300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit; Mode of operation Pulsed class-AB f (MHz) 1030 to 1090 IDq (mA) 150 VDS (V) 32 PL (W) 300 Gp (dB) 16.5 ηD (%) 57 CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
See all NXP Semiconductors datasheets
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