BLA1011-300
description
300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz.
Table 1. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit; tp = 50 µs; δ = 2 %. Mode of operation Pulsed class-AB f (MHz) 1030 to 1090 IDq (m A) 150 VDS (V) 32 PL (W) 300 Gp (d B) 16.5 ηD (%) 57
CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical performance at frequencies between 1030 MHz and 1090 MHz, a supply voltage of 32 V, an IDq of 150 m A, a tp of 50 µs and a δ of 2 %: N Output power = 300 W N Power gain = 16.5 d B (typ) N Efficiency = 57 % (typ) I Easy power control I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for operation in 1030 MHz to 1090 MHz band I Internally matched for ease of use
1.3 Applications
I RF power amplifiers for Avionics applications in the 1030 MHz to 1090...
