BLA1011S-200, BLA1011-200 Datasheet - NXP

BLA1011S-200 Avionics LDMOS transistor

200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1: Typical performance RF performance at Th = 25 °C in a common source class-AB test circuit; IDq = 150 mA; typical values. Mode of operation Pulsed class-AB: 1030 MHz to 1090 MHz Condi.

BLA1011S-200 Features

* s Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a supply voltage of 36 V and an IDq of 150 mA: x Load power ≥ 200 W x Gain ≥ 13 dB x Efﬁciency ≥ 45 % x Rise time ≤ 50 ns x Fall time ≤ 50 ns s High power gain s Easy power control s Excellent ruggedness s Source on mo

BLA1011-200_PhilipsSemiconductors.pdf