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BLA1011S-200, BLA1011-200 Avionics LDMOS transistor

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Description

www.DataSheet4U.com BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev.08 * 26 October 2005 Product data sheet 1.Product profile 1.1 G.
200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.

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This datasheet PDF includes multiple part numbers: BLA1011S-200, BLA1011-200. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
BLA1011S-200, BLA1011-200
Manufacturer
NXP ↗
File Size
114.78 KB
Datasheet
BLA1011-200_PhilipsSemiconductors.pdf
Description
Avionics LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLA1011S-200, BLA1011-200.
Please refer to the document for exact specifications by model.

Features

* s Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a supply voltage of 36 V and an IDq of 150 mA: x Load power ≥ 200 W x Gain ≥ 13 dB x Efficiency ≥ 45 % x Rise time ≤ 50 ns x Fall time ≤ 50 ns s High power gain s Easy power control s Excellent ruggedness s Source on mo

Applications

* at frequencies from 1030 MHz to 1090 MHz. Table 1: Typical performance RF performance at Th = 25 °C in a common source class-AB test circuit; IDq = 150 mA; typical values. Mode of operation Pulsed class-AB: 1030 MHz to 1090 MHz Conditions tp = 50 µs; δ = 2 % tp = 128 µs; δ = 2 % tp = 340 µs; δ = 1 %

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