Datasheet Specifications
- Part number
- BLA6H1011-600
- Manufacturer
- NXP ↗
- File Size
- 163.57 KB
- Datasheet
- BLA6H1011-600_PhilipsSemiconductors.pdf
- Description
- LDMOS avionics power transistor
Description
www.DataSheet4U.com BLA6H1011-600 LDMOS avionics power transistor Rev.01 * 22 April 2010 Product data sheet 1.Product profile 1.1 General .
Features
* Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 mA, a tp of 50 μs with δ of 2 %: Output power = 600 W Power gain = 17 dB Efficiency = 52 %Applications
* in the 1030 MHz to 1090 MHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 50 μs; δ = 2 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (MHz) 1030 to 1090 VDS (V) 48 PL (W) 600 Gp (dB) 17 ηD (%) 52 tr (ns) 11 tf (ns) 5 CAUTION ThBLA6H1011-600 Distributors
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