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BLA6H1011-600 - LDMOS avionics power transistor

NXP

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Datasheet Details

Part number: BLA6H1011-600
Manufacturer: NXP ↗
File Size: 163.57 KB
Datasheet: BLA6H1011-600_PhilipsSemiconductors.pdf
Description: LDMOS avionics power transistor

BLA6H1011-600 Product details

Description

600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range.

Features

Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 mA, a tp of 50 μs with δ of 2 %: Output power = 600 W Power gain = 17 dB Efficiency = 52 %.
Easy power control.
Integrated ESD protection.
High flexibility with respect to pulse formats.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (1030 MHz to 1090 MHz).

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Published: Jun 30, 2010 |