BLA0912-250R Datasheet - NXP Semiconductors

BLA0912-250R Avionics LDMOS power transistor

Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Table 1. Test information Typical RF performance measured in common source class-AB test circuit at PL = 250 W and 960 MHz to.

BLA0912-250R Features

* High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance. 1.3 Applications

* Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, T

BLA0912-250R_NXPSemiconductors.pdf