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BLA0912-250R - Avionics LDMOS power transistor

Description

Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap.

The common source is connected to the mounting flange.

Table 1.

Features

  • High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance. 1.3.

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Datasheet Details

Part number BLA0912-250R
Manufacturer NXP Semiconductors
File Size 163.50 KB
Description Avionics LDMOS power transistor
Datasheet download datasheet BLA0912-250R Datasheet
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    BLA0912-250R Avionics LDMOS power transistor Rev. 01 — 3 March 2010 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Table 1. Test information Typical RF performance measured in common source class-AB test circuit at PL = 250 W and 960 MHz to 1215 MHz frequency band. Th = 25 °C; Zth(j-h) = 0.15 K/W; unless otherwise specified. Mode of operation all modes TCAS Mode-S JTIDS f (MHz) 960 to 1215 1030 to 1090 1030 to 1090 1030 to 1090 960 to 1215 tp (μs) 100 32 128 340 δ % 10 2 1 VDS PL (V) 36 36 36 36 Gp ΔGp ηD 50 50 50 50 45 Pdroop(pulse) 0.1 0 0.1 0.2 0.
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