BLA6H0912L-1000 Datasheet - Ampleon

BLA6H0912L-1000, LDMOS avionics power transistor

BLA6H0912L-1000; BLA6H0912LS-1000 LDMOS avionics power transistor Rev.5 * 1 September 2015 Product data sheet 1.Product profile 1.1 Gener.
1000W LDMOS pulsed power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS, JT.

Features

* Easy power control
* Integrated ESD protection
* High flexibility with respect to pulse formats
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (960 MHz to 1215 MHz)
* Internally matched for ease of use

Applications

* in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS, JTIDS, DME and TACAN. Table 1. Application information Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 200 mA; in a class-AB application circuit. Test signal f (MHz) VDS PL (V) (W) Gp (dB) D tr (%) (ns) tf

BLA6H0912L-1000-Ampleon.pdf