BLA6H1011-600 Datasheet - Ampleon

BLA6H1011-600, LDMOS avionics power transistor

BLA6H1011-600 LDMOS avionics power transistor Rev.02 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range.

Features

* Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 mA, a tp of 50 s with  of 2 %:
* Output power = 600 W
* Power gain = 17 dB
* Efficiency = 52 %
* Easy power control
* Integrated ESD protection
* High flexibi

Applications

* in the 1030 MHz to 1090 MHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f (MHz) VDS PL Gp D tr tf (V) (W) (dB) (%) (ns) (ns) pulsed RF 1030 to 1090 48 600 17 52 11

BLA6H1011-600-Ampleon.pdf