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BLA6G1011LS-200RG, BLA6G1011-200R - Power LDMOS transistor

Ampleon

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BLA6G1011LS-200RG Datasheet Preview — This datasheet PDF includes multiple part numbers: BLA6G1011LS-200RG, BLA6G1011-200R. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	BLA6G1011LS-200RG, BLA6G1011-200R
Manufacturer	Ampleon
File Size	355.57 KB
Description	Power LDMOS transistor
Datasheet	BLA6G1011-200R-Ampleon.pdf
Note	This datasheet PDF includes multiple part numbers: BLA6G1011LS-200RG, BLA6G1011-200R. Please refer to the document for exact specifications by model.

BLA6G1011LS-200RG Product details

Description

200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

Features

Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply voltage of 28 V and an IDq of 100 mA:.
Output power = 200 W.
Power gain = 20 dB.
Efficiency = 65 %.
Easy power control.
Integrated ESD protection.
Enhanced ruggedness.
High efficiency.
Excellent thermal stability.
Designed for b.

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Published: Apr 26, 2018 |