Description
BLA6G1011-200R; BLA6G1011L(S)-200RG Power LDMOS transistor Rev.6 * 1 September 2015 Product data sheet 1.Product profile 1.1 General des.
200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.
Features
* Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply voltage of 28 V and an IDq of 100 mA:
* Output power = 200 W
* Power gain = 20 dB
* Efficiency = 65 %
* Easy power control
* Integrated ESD protection
* Enhanced ruggedness
* High effic
Applications
* at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information
Typical RF performance at Tcase = 25 C. Test signal
f
(MHz)
VDS PL
Gp
D tr
(V) (W) (dB) (%) (ns)
Typical RF performance in a class-AB production test circuit for SOT502A
pulsed RF
1030 to 1090 28 200 20
65 10
Typical
