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BLA6G1011LS-200RG Datasheet - Ampleon

Power LDMOS transistor

BLA6G1011LS-200RG Features

* Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply voltage of 28 V and an IDq of 100 mA:

* Output power = 200 W

* Power gain = 20 dB

* Efficiency = 65 %

* Easy power control

* Integrated ESD protection

* Enhanced ruggedness

* High effic

BLA6G1011LS-200RG General Description

200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 C. Test signal f (MHz) VDS PL Gp D tr (V) (W) (dB) (%) (ns) Typical RF performance in a class-AB production test circuit for SOT.

BLA6G1011LS-200RG Datasheet (355.57 KB)

Preview of BLA6G1011LS-200RG PDF

Datasheet Details

Part number:

BLA6G1011LS-200RG

Manufacturer:

Ampleon

File Size:

355.57 KB

Description:

Power ldmos transistor.
BLA6G1011-200R; BLA6G1011L(S)-200RG Power LDMOS transistor Rev. 6 1 September 2015 Product data sheet 1. Product profile 1.1 General des.

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TAGS

BLA6G1011LS-200RG Power LDMOS transistor Ampleon

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